PART |
Description |
Maker |
2N3896 2N3899 2N6171 2N6172 2N6173 2N6174 2N3870 2 |
Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) 可控硅整流器(反向阻断三极晶闸管 Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) 35 A, 400 V, SCR, TO-203AA Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) 35 A, 100 V, SCR, TO-203AA (2N38xx) Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors)
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Motorola Mobility Holdings, Inc. Motorola Inc MOTOROLA[Motorola, Inc]
|
2N6240-D |
Reverse Blocking Triode Thyristors
|
ON Semiconductor
|
TIC116A12 |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
|
Comset Semiconductor
|
TIC126A TIC126B TIC126C TIC126D TIC126E TIC126M TI |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
|
Comset Semiconductor
|
MCR230 MCR231 |
Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors
|
New Jersey Semi-Conductor P...
|
MCR100 MCR100-8 MCR100-6 |
Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors)
|
Motorola, Inc
|
2N6172 2N6171 2N6173 2N6174 2N2896 2N2898 2N2897 2 |
Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors)
|
Motorola
|
C228 C228M C229M C228A C228A3 C228B C228B3 C228D C |
SILICON CONTROLLED RECTIFIER REVERSE BLOCKING TRIODE THYRISTOR 可控硅反向阻断三极晶闸管 From old datasheet system
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Motorola Mobility Holdings, Inc. Motorola, Inc. MOTOROLA[Motorola, Inc]
|
C230 C233 C231 C232 C231B3 |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Repetitive peak off-state voltage 200 V.
|
MOTOROLA[Motorola, Inc]
|
DGT304RE DGT304RE13 |
Reverse Blocking Gate Turn-off Thyristor 390 A, 1300 V, REVERSE CONDUCTING GTO SCR
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Dynex Semiconductor, Ltd. Dynex Semiconductor Ltd. DYNEX[Dynex Semiconductor]
|
DRA03TG DRA03T DRA03TB DRA03TC DRA03TE |
0.3A Reverse Blocking Thyristor
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Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
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IXRA15N120 |
IGBT with Reverse Blocking capability
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IXYS
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